Exploration (Jun 2023)
Ultralow‐power in‐memory computing based on ferroelectric memcapacitor network
- Bobo Tian,
- Zhuozhuang Xie,
- Luqiu Chen,
- Shenglan Hao,
- Yifei Liu,
- Guangdi Feng,
- Xuefeng Liu,
- Hongbo Liu,
- Jing Yang,
- Yuanyuan Zhang,
- Wei Bai,
- Tie Lin,
- Hong Shen,
- Xiangjian Meng,
- Ni Zhong,
- Hui Peng,
- Fangyu Yue,
- Xiaodong Tang,
- Jianlu Wang,
- Qiuxiang Zhu,
- Yachin Ivry,
- Brahim Dkhil,
- Junhao Chu,
- Chungang Duan
Affiliations
- Bobo Tian
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Zhuozhuang Xie
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Luqiu Chen
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Shenglan Hao
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Yifei Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Guangdi Feng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Xuefeng Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Hongbo Liu
- School of Materials Science and Engineering Shanghai University of Engineering Science Shanghai China
- Jing Yang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Yuanyuan Zhang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Wei Bai
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Tie Lin
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China
- Hong Shen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China
- Xiangjian Meng
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China
- Ni Zhong
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Hui Peng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Fangyu Yue
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Xiaodong Tang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Jianlu Wang
- Frontier Institute of Chip and System Fudan University Shanghai China
- Qiuxiang Zhu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Yachin Ivry
- Department of Materials Science and Engineering Solid‐State Institute Technion‐Israel Institute of Technology Haifa Israel
- Brahim Dkhil
- CentraleSupélec, CNRS‐UMR8580, Laboratoire SPMS Université Paris‐Saclay Gif‐sur‐Yvette France
- Junhao Chu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- Chungang Duan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain‐inspired Intelligent Materials and Devices, Department of ElectronicsEast China Normal UniversityShanghaiChina
- DOI
- https://doi.org/10.1002/EXP.20220126
- Journal volume & issue
-
Vol. 3,
no. 3
pp. n/a – n/a
Abstract
Abstract Analog storage through synaptic weights using conductance in resistive neuromorphic systems and devices inevitably generates harmful heat dissipation. This thermal issue not only limits the energy efficiency but also hampers the very‐large‐scale and highly complicated hardware integration as in the human brain. Here we demonstrate that the synaptic weights can be simulated by reconfigurable non‐volatile capacitances of a ferroelectric‐based memcapacitor with ultralow‐power consumption. The as‐designed metal/ferroelectric/metal/insulator/semiconductor memcapacitor shows distinct 3‐bit capacitance states controlled by the ferroelectric domain dynamics. These robust memcapacitive states exhibit uniform maintenance of more than 104 s and well endurance of 109 cycles. In a wired memcapacitor crossbar network hardware, analog vector‐matrix multiplication is successfully implemented to classify 9‐pixel images by collecting the sum of displacement currents (I = C × dV/dt) in each column, which intrinsically consumes zero energy in memcapacitors themselves. Our work sheds light on an ultralow‐power neural hardware based on ferroelectric memcapacitors.
Keywords