Nanophotonics (Sep 2019)

Gate-tunable metafilm absorber based on indium silicon oxide

  • Zhao Hongwei,
  • Zhang Ran,
  • Chorsi Hamid T.,
  • Britton Wesley A.,
  • Chen Yuyao,
  • Iyer Prasad P.,
  • Schuller Jon A.,
  • Negro Luca Dal,
  • Klamkin Jonathan

DOI
https://doi.org/10.1515/nanoph-2019-0190
Journal volume & issue
Vol. 8, no. 10
pp. 1803 – 1810

Abstract

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In this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57% and up to 620 nm shift in the resonance wavelength were measured.

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