AIP Advances (Apr 2014)

Visible and near-infrared electroluminescence from TiO2/p+-Si heterostructured device

  • Yang Yang,
  • Canxing Wang,
  • Luelue Xiang,
  • Xiangyang Ma,
  • Deren Yang

DOI
https://doi.org/10.1063/1.4871188
Journal volume & issue
Vol. 4, no. 4
pp. 047109 – 047109-8

Abstract

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We report on visible and near-infrared (NIR) electroluminescence (EL) from the device based on the TiO2/p+-Si heterostructure, in which the TiO2 film is composed of anatase and rutile phases. As the device is applied with sufficiently high forward bias with the positive voltage connecting to p+-Si, the visible EL peaking at ∼600 nm along with the NIR EL centered at ∼810 nm occur simultaneously. It is proposed that the oxygen vacancies in the anatase TiO2 and Ti3+ defect states in the rutile TiO2 are the responsible centers for the visible and NIR EL, respectively.