The Effect of Transition Metals Co-Doped ZnO Nanotubes Based-Diluted Magnetic Semiconductor for Spintronic Applications

Abstract

The Impact of Co and Gd on the structural, magnetic and dielectric properties of ZnO nanotubes synthesized by co-precipitation is reported. The results demonstrate that incorporating Co and Gd into ZnO diminished crystallinity while retaining the optimum orientation. The outcomes of transmission electron microscopy and scanning electron microscopy examined that the Co and Gd dopants had no effect on the morphology of the produced nanotubes. It was also discovered that as the frequency and concentration of Gd co-dopant decreased, the dielectric constant and loss values increased. When doping was present, the dielectric constant and ac electrical conductivity response was found to be inversely related. Ultimately, at 300K, Co and Gd co-doped ZnO nanotubes exhibited ferromagnetic properties. When Gd doping was increased to 3%, the ferromagnetic response increased. Since then, increasing the Gd co-doping, the ferromagnetic response decreased. For the same sample (Zn0.96−xCo0.04Gd0.03O nanotubes), the electrical conductivity exhibited also superior to pure and low Gd doped ZnO. Its high ferromagnetism is usually caused by magnetic impurities replaced on the ZnO side. Therefore, considering the behaviour of these nanotubes, it can be sued spin-based electronics.

Keywords

• diluted magnetic semiconductor
• ferromagnetism
• dielectric properties
• oxygen vacancies
• spintronic devices