Interfacial diffusion in TiN0.3/AlN composite

Abstract

In recent years, extensive research has been conducted on nano-multilayer films of TiN/AlN system. However, there are few reports on its bulk composites. In this study, non-stoichiometric TiN0.3 was prepared by mechanical alloying, then TiN0.3/AlN composites were fabricated through spark plasma sintering (SPS) utilizing both layered and mixed sintering techniques. The phase composition, element distribution and microstructure of TiN0.3/AlN composites were characterized by metallography, XRD, SEM, EDS and TEM, to study the diffusion of N atoms in the interface region of TiN0.3/AlN composites. The results show that N in AlN diffuses into TiN0.3 through a vacancy diffusion mechanism, The area of TiN0.3 in contact with AlN absorbs N from AlN to make the composition close to the normal proportion of TiN, while the area "far away" from the interface is close to the component of TiN0.3, and its diffusion degree weakens gradually. In the two-phase bonding region, there is a thin amorphous layer whose width is less than 1 nm. The electron diffraction pattern elongates longitudinally and produces coherent lattice. The AlN lattice of hexagonal structure is distorted to TiN lattice, forming TiN0.3/AlN with a face-centered cubic structure.

Keywords

• tin/aln composite
• sps
• interface diffusion
• cohere