Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites
Lihong Su,
Zhou Yang,
Xitong Wang,
Ziao Zou,
Bo Wang,
Gary Hodes,
Ninghui Chang,
Yongyong Suo,
Zhibo Ma,
Haoxu Wang,
Yucheng Liu,
Junping Zhang,
Shuanhu Wang,
Yuefei Li,
Fengxia Yang,
Jixin Zhu,
Fei Gao,
Wei Huang,
Shengzhong Liu
Affiliations
Lihong Su
School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China; Dongguan Sanhang Civil-Military Integration Innovation Institute, Dongguan, 52300 Guangdong, China
Zhou Yang
Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
Xitong Wang
School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China; Dongguan Sanhang Civil-Military Integration Innovation Institute, Dongguan, 52300 Guangdong, China
Ziao Zou
School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China
Bo Wang
School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China; School of Aeronautics, Northwestern Polytechnical University, Xi’an, 710072 Shaanxi, China
Gary Hodes
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel
Ninghui Chang
School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China
Yongyong Suo
School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China; School of Aeronautics, Northwestern Polytechnical University, Xi’an, 710072 Shaanxi, China
Zhibo Ma
School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China; Key Lab of Micro/Nano Systems for Aerospace, Ministry of Education, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China
Haoxu Wang
Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China; University of Queensland, Australian Institute for Bioengineering & Nanotechnology, Nanomaterials Centre, St. Lucia, Qld, Australia
Yucheng Liu
Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
Junping Zhang
School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China
Shuanhu Wang
School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China; School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China
Yuefei Li
School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China; Dongguan Sanhang Civil-Military Integration Innovation Institute, Dongguan, 52300 Guangdong, China
Fengxia Yang
School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China; Dongguan Sanhang Civil-Military Integration Innovation Institute, Dongguan, 52300 Guangdong, China
Jixin Zhu
Institute of Flexible Electronics, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China
Fei Gao
Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
Wei Huang
School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China; Institute of Flexible Electronics, Northwestern Polytechnical University, Xi’an, 710129 Shaanxi, China
Shengzhong Liu
Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
We report a novel Mn-Co-Ni-O (MCN) nanocomposite in which the p-type semiconductivity of Mn-Co-Ni-O can be manipulated by addition of graphene. With an increase of graphene content, the semiconductivity of the nanocomposite can be tuned from p-type through electrically neutral to n-type. The very low effective mass of electrons in graphene facilitates electron tunneling into the MCN, neutralizing holes in the MCN nanoparticles. XPS analysis shows that the multivalent manganese ions in the MCN nanoparticles are chemically reduced by the graphene electrons to lower-valent states. Unlike traditional semiconductor devices, electrons are excited from the filled graphite band into the empty band at the Dirac points from where they move freely in the graphene and tunnel into the MCN. The new composite film demonstrates inherent flexibility, high mobility, short carrier lifetime, and high carrier concentration. This work is useful not only in manufacturing flexible transistors, FETs, and thermosensitive and thermoelectric devices with unique properties but also in providing a new method for future development of 2D-based semiconductors.
