Monte Carlo simulation study on secondary electron yield of SiO2

Abstract

Electron emission characteristics, mainly the intrinsic secondary electron yield, of an insulator material (glass SiO2) are studied by a Monte Carlo simulation method. In the modeling of electron inelastic scattering, we have employed the Levine-Louie (LL) dielectric function model together with optical energy loss function data for the description of electronic excitation and the Frohlich’s theory for the phonon scattering. In the modelling of electron elastic scattering, we have used Mott’s elastic scattering cross sections calculated with 384 scattering potential models. For the modelling of electron elastic scattering, we have used Mott elastic scattering cross sections calculated with 384 scattering potential models. It is found that the elastic scattering potential model has very strong impact to the simulated secondary electron yield but not to the backscattering coefficient. The theoretical uncertainty range for the Monte Carlo simulation of secondary electron emission yield for an oxide is thus much higher than that for an element. For certain selected potential models, the calculated secondary electron yields could be in a very good agreement with the experimental data. This sensitive character of the yield calculation to the choice of potential model allows the future determination of a reliable potential model when accurate experimental measurement data are available.

Keywords

• Monte Carlo
• Secondary electron yield
• Elastic scattering
• Dielectric function
• SiO2