Elliptical Polarization of Localized States in an Anisotropic Single GaAs Quantum Ring
Seongho Park,
Minju Kim,
Inhong Kim,
Robert A. Taylor,
Jindong Song,
Kwangseuk Kyhm
Affiliations
Seongho Park
Department of Opto/Cogno-Mechatronics Engineering, Research Center for Dielectric Advanced Matter Physic (RCDAMP), Pusan National University, Busan 46241, Republic of Korea
Minju Kim
Smart Gym-Based Translational Research Center for Active Senior’s Healthcare, Pukyong National University, Busan 48516, Republic of Korea
Inhong Kim
Department of Opto/Cogno-Mechatronics Engineering, Research Center for Dielectric Advanced Matter Physic (RCDAMP), Pusan National University, Busan 46241, Republic of Korea
Robert A. Taylor
Department of Physics, University of Oxford, Oxford OX1 3PU, UK
Jindong Song
Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
Kwangseuk Kyhm
Department of Opto/Cogno-Mechatronics Engineering, Research Center for Dielectric Advanced Matter Physic (RCDAMP), Pusan National University, Busan 46241, Republic of Korea
Localized states in an anisotropic single GaAs quantum ring were investigated in terms of polarization dependence of micro-photoluminescence spectrum at 5K. Given four Stokes parameters measured with a pair of linear polarizers and waveplates, the elliptical polarization states of two different vertical confinement states (k=1 and k=2) were compared with phase, rotation, and ellipticity angles. While the polarized emission intensity of the k=2 states becomes enhanced along [1,1,0] compared to that along [1,1¯,0], the polarization asymmetry of the k=1 states shows the opposite result. We conclude the polarization state is determined by the shape of the lateral wavefunctions. In the k=2 state, crescent-like wavefunctions are strongly localized, but the k=1 state consists of two crescent-like wavefunctions, which are connected weakly through quantum tunneling.
