Materials (Jun 2021)

Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se<sub>2</sub> Thin Films

  • Deewakar Poudel,
  • Benjamin Belfore,
  • Tasnuva Ashrafee,
  • Shankar Karki,
  • Grace Rajan,
  • Angus Rockett,
  • Sylvain Marsillac

DOI
https://doi.org/10.3390/ma14133596
Journal volume & issue
Vol. 14, no. 13
p. 3596

Abstract

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Cu(In,Ga)Se2 (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium.

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