A CMOS bandgap reference for high precision DACs

Feng Wei; Shi Juan; Zhai Jianghui; Guo Dong

doi:10.16157/j.issn.0258-7998.172378

Dianzi Jishu Yingyong (Feb 2018)

A CMOS bandgap reference for high precision DACs

Feng Wei,
Shi Juan,
Zhai Jianghui,
Guo Dong

Affiliations

Feng Wei: School of Information and Communication，Guilin University of Electronic Technology，Guilin 541004，China
Shi Juan: School of Information and Communication，Guilin University of Electronic Technology，Guilin 541004，China
Zhai Jianghui: School of Information and Communication，Guilin University of Electronic Technology，Guilin 541004，China
Guo Dong: School of Information and Communication，Guilin University of Electronic Technology，Guilin 541004，China

DOI: https://doi.org/10.16157/j.issn.0258-7998.172378
Journal volume & issue: Vol. 44, no. 2
pp. 16 – 19

Abstract

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In order to meet a high-speed, high-precision DAC design requirements. A practical reference voltage source is designed by the basic design principle of the bandgap reference voltage source, and a voltage reference circuit with fast start and high stability is obtained. The post-layout-simulation results show that the output voltage is 1.184 V at 0.5 V when the power supply voltage is 2.5 V, the starting time is 0.5 μs, and the output voltage is 0.185 5 mW. In the temperature range of -15 ℃~75 ℃ temperature drift coefficient is 8.7×10-5/℃. At low frequency when the power supply voltage suppression ratio of -85 dB; drawing the size of the area is only 154.799 μm×48.656 μm.

Published in Dianzi Jishu Yingyong

ISSN: 0258-7998 (Print)
Publisher: National Computer System Engineering Research Institute of China
Country of publisher: China
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
Website: http://journal.chinaaet.com/en

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