Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

Abstract

Gallium arsenide holds record efficiency for single junction solar cells, but high production costs limit applications. Here Metaferia et al. show high quality GaAs and GaInP at rates exceeding 300 and 200 micrometers per hour by dynamic hydride vapor phase epitaxy and > 25% efficient solar cells.