Capacitance-voltage measurements in GaAs thin-film epitaxial structures

Abstract

It is shown that capacitance–voltage characteristics that feature steeply dropping regions, in particular those of GaAs thin-film structures, may be measured at moderately small amplitudes of the measuring ac voltage (of the order of 100 mV) at the expense of taking measurements at two different amplitudes. This conclusion is confirmed by the results of numerical calculation of the apparent capacitance of GaAs epitaxial structures.

Keywords

• gallium arsenide
• epitaxial structure
• Schottky barrier
• current-voltage characteristics
• deep trapping centers