APL Materials
(Sep 2024)
Adsorption-controlled growth of homoepitaxial c-plane sapphire films
Lena N. Majer,
Tolga Acartürk,
Peter A. van Aken,
Wolfgang Braun,
Luca Camuti,
Johan Eckl-Haese,
Jochen Mannhart,
Takeyoshi Onuma,
Ksenia S. Rabinovich,
Darrell G. Schlom,
Sander Smink,
Ulrich Starke,
Jacob Steele,
Patrick Vogt,
Hongguang Wang,
Felix V. E. Hensling
Affiliations
Lena N. Majer
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Tolga Acartürk
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Peter A. van Aken
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Wolfgang Braun
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Luca Camuti
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Johan Eckl-Haese
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Jochen Mannhart
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Takeyoshi Onuma
Department of Applied Physics, Kogakuin University, 2665-1, Hachioji, Tokyo 192-0015, Japan
Ksenia S. Rabinovich
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Darrell G. Schlom
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Sander Smink
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Ulrich Starke
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Jacob Steele
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Patrick Vogt
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Hongguang Wang
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
Felix V. E. Hensling
Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
DOI
https://doi.org/10.1063/5.0224092
Journal volume & issue
Vol. 12,
no. 9
Abstract
Read online
Sapphire is a technologically highly relevant material, but it poses many challenges when performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the substrates. The films exhibit exceptional optical properties, such as a single-crystal-like bandgap and a low density of F+ centers.
Published in APL Materials
ISSN
2166-532X (Online)
Publisher
AIP Publishing LLC
Country of publisher
United States
LCC subjects
Technology: Chemical technology: Biotechnology
Science: Physics
Website
http://aplmaterials.aip.org
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