Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions

Yixin Shao; Victor Lopez-Dominguez; Noraica Davila; Qilong Sun; Nicholas Kioussis; Jordan A. Katine; Pedram Khalili Amiri

doi:10.1038/s43246-022-00310-x

Communications Materials (Nov 2022)

Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions

Yixin Shao,
Victor Lopez-Dominguez,
Noraica Davila,
Qilong Sun,
Nicholas Kioussis,
Jordan A. Katine,
Pedram Khalili Amiri

Affiliations

Yixin Shao: Department of Electrical and Computer Engineering, Northwestern University
Victor Lopez-Dominguez: Department of Electrical and Computer Engineering, Northwestern University
Noraica Davila: Western Digital Corporation
Qilong Sun: School of Science, Shandong Jianzhu University
Nicholas Kioussis: Department of Physics and Astronomy, California State University
Jordan A. Katine: Western Digital Corporation
Pedram Khalili Amiri: Department of Electrical and Computer Engineering, Northwestern University

DOI: https://doi.org/10.1038/s43246-022-00310-x
Journal volume & issue: Vol. 3, no. 1
pp. 1 – 8

Abstract

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Voltage-controlled magnetic random-access memory is promising for high-performance computing applications. Here, a perpendicular magnetic tunnel junction structure with high voltage-controlled magnetic anisotropy coefficient is developed, allowing sub-volt and sub-nanosecond precessional switching.

Published in Communications Materials

ISSN: 2662-4443 (Online)
Publisher: Nature Portfolio
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.nature.com/commsmat/

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