The Investigation for Coating Method of Titanium Dioxide Layer in Perovskite Solar Cells
Pao-Hsun Huang,
Chien-Wu Huang,
Chih-Chieh Kang,
Chia-Hsun Hsu,
Shui-Yang Lien,
Na-Fu Wang,
Chien-Jung Huang
Affiliations
Pao-Hsun Huang
School of Information Engineering, Jimei University, 183 Yinjiang Road, Jimei, Xiamen, Fujian 361021, China
Chien-Wu Huang
Department of Applied Physics, National University of Kaohsiung, Kaohsiung University Rd., Kaohsiung 81148, Taiwan
Chih-Chieh Kang
Department of Electro-Optical Engineering, Southern Taiwan University of Science and Technology, Nan-Tai Street, Tainan 71005, Taiwan
Chia-Hsun Hsu
School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Shui-Yang Lien
School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
Na-Fu Wang
Department of Electronic Engineering, Center for Environment Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Niaosong District, Kaohsiung 81148, Taiwan
Chien-Jung Huang
Department of Applied Physics, National University of Kaohsiung, Kaohsiung University Rd., Kaohsiung 81148, Taiwan
The effect of conventional Perovskite solar cells (PSCs) by using different concentration and spin-coating speeds of titanium dioxide (TiO2) as an electron transport layer (ETL) was studied. The influence of TiO2 based on device structure: fluorine-doped tin oxide substrate/TiO2/Perovskite (CH3NH3PbI3)/2,2′,7,7′-Tetrakis[N,N-di(4-methoxyp phenyl)amino]-9,9′-spirobifluorene/silver, is also studied. The spin-coating speed is varied in a range from 1000 to 3000 rpm to get optimal performance of device. The optimized power conversion efficiency (PCE) of PSCs with original concentration (OC) and double concentration (DC) TiO2 is 8.74 and 9.93%, respectively. The reason is attributed to excellent absorption in shorter wavelength, compact characteristic, and suitable thickness of TiO2, leading to perfect short-circuit current density (Jsc), lower series resistance (Rs), and higher fill factor (FF) of 0.75. Besides, recombination of electron and hole is also decreased due to the compact feature, leading to higher open-circuit voltage (VOC) of 0.91 V.
