A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors

Baek Su Kim; Seung Dam Hyun; Taehwan Moon; Keum Do Kim; Young Hwan Lee; Hyeon Woo Park; Yong Bin Lee; Jangho Roh; Beom Yong Kim; Ho Hyun Kim; Min Hyuk Park; Cheol Seong Hwang

doi:10.1186/s11671-020-03301-4

Nanoscale Research Letters (Apr 2020)

A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors

Baek Su Kim,
Seung Dam Hyun,
Taehwan Moon,
Keum Do Kim,
Young Hwan Lee,
Hyeon Woo Park,
Yong Bin Lee,
Jangho Roh,
Beom Yong Kim,
Ho Hyun Kim,
Min Hyuk Park,
Cheol Seong Hwang

Affiliations

Baek Su Kim: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University
Seung Dam Hyun: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University
Taehwan Moon: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University
Keum Do Kim: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University
Young Hwan Lee: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University
Hyeon Woo Park: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University
Yong Bin Lee: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University
Jangho Roh: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University
Beom Yong Kim: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University
Ho Hyun Kim: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University
Min Hyuk Park: School of Materials Science and Engineering, Pusan National University
Cheol Seong Hwang: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University

DOI: https://doi.org/10.1186/s11671-020-03301-4
Journal volume & issue: Vol. 15, no. 1
pp. 1 – 11

Abstract

Read online

Abstract The chemical, physical, and electrical properties of the atomic layer deposited Hf0.5Zr0.5O2 thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration, grain size, and the resulting ferroelectric properties. Depositing Hf0.5Zr0.5O2 films with the TDMA precursors results in lower C concentration and slightly larger grain size. These findings are beneficial to grow more ferroelectric-phase-dominant film, which mitigates its wake-up effect. From the wake-up test of the TDMA-Hf0.5Zr0.5O2 film with a 2.8 MV/cm cycling field, the adverse wake-up effect was well suppressed up to 105 cycles, with a reasonably high double remanent polarization value of ~40 μC/cm2. The film also showed reliable switching up to 109 cycles with the 2.5 MV/cm cycling field without involving the wake-up effect but with the typical fatigue behavior.

Published in Nanoscale Research Letters

ISSN: 1931-7573 (Print); 1556-276X (Online)
Publisher: SpringerOpen
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.springer.com/journal/11671

About the journal

Abstract

Keywords