The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature

Abstract

We have fabricated the heavily Ga-doped layer in Ge single crystal by the implantation and rapid thermal annealing method. The samples show a crossover from the insulating to the superconducting behavior as the annealing temperature increases. Transport measurements suggest that the superconductivity is from the heavily Ga-doped layer in Ge.