Tekhnologiya i Konstruirovanie v Elektronnoi Apparature (Oct 2008)
Disign peculiarities of power supply internal circuits of micropower VLSI, based on injection logic
Abstract
Control of Ohmic resistance value of the “buried layers of n+-type with application of the mathematical model, based on the elementary cell, equivalent to the focused conductivity, split by the two coordinates, ensures the considerable scatter reduction of the current values of the injectors I2L VLSI on the chip surface and to reduce the chip total area at the expense of the power supply bus metallization total area reduction.