Self-Assembled Monolayers (SAMs)/Al₂O₃ Double Layer Passivated InSnZnO Thin-Film Transistor

Abstract

We fabricated high-performance InSnZnO (ITZO) thin-film transistors (TFTs) with self-assembled monolayers (SAMs)/Al2O3 double passivation layers (PVLs). The presented SAMs/Al2O3 double passivation leads to high-performance ITZO TFTs with a steep subthreshold slope (~85 mV/dec), a low threshold voltage (~0.9 V), high mobility (~19.8 cm2V-1s-1), and high on-off current ratio (~8.7 × 109). Moreover, compared to devices with Al2O3PVL, ITZO TFTs with SAMs/Al2O3 double PVLs show better stability in ambient air with a relative humidity of 60% under positive bias stress (PBS) and negative bias stress (NBS). This enhanced stability is attributed to the presence of a high-quality SAM/Al2O3 dual PVL, which not only inhibits Vo-related trap sites and reduces overall trap density, but also protects the back-channel from environmental influences.

Keywords

• InSnZnO
• thin-film transistors
• self-assembled monolayers
• double passivation
• stability