Abstract In recent years, impressive progress has been made in developing high‐performance perovskite light‐emitting diodes (PeLEDs) with efficiencies comparable to those of traditional organic light‐emitting diodes (OLEDs). It is convinced that the position of exciton recombination zone is crucial for the performance of the LEDs, however, the dynamics of the exciton recombination zone in PeLEDs and its influence on the performance of PeLEDs remain unclear. Herein, luminescent quantum‐dots (QDs) sensing layers with different energy band landscape and electric properties are introduced into PeLEDs as probers to investigate the position of recombination zone. Consequently, it is found that the band offset between the perovskite layer and the adjacent layer is vital to the position of recombination zone. Modulating the recombination zone towards the bulk of the emission layer helps to improve the device performance as well as the operational stability.
