Differential working circuit of a positive channel metal oxide semiconductor (PMOS) dosimeter probe

Abstract

Currently, positive channel metal oxide semiconductor (PMOS) dosimeters used in China have low sensitivity; to solve this problem, this study aimed to improve the circuit of the PMOS dosimeter probe through detailed investigation of the circuit principles. A probe circuit was hence developed for the differential working mode, and a 60Co γ radiation source was used to perform irradiation tests on commonly used probes in China. The results showed that the radiation response of the developed probe circuit in the differential working mode was linear and consistent with that of the constant current injection mode. Additionally, the sensitivity of the probe in the differential mode was four times that of the constant current injection mode, which was a considerable improvement.

Keywords

• pmosfet
• dosimeter
• differential circuit
• sensitivity
• total dose