Temperature dependency of excitonic effective mass and charge carrier conduction mechanism in CH3NH3PbI3−xClx thin films

Abstract

Abstract In this paper we explain the temperature dependence of excitonic effective mass and charge carrier conduction mechanism occurs in CH3NH3PbI3−xClx thin films prepared by chemical dip coating (CDC), spray pyrolysis (Spray) and repeated dipping-withdrawing (Dipping). Hall Effect study confirmed that prepared CH3NH3PbI3−xClx samples are p-type semiconductor having carrier concentration of the order of ~ 1016 cm−3. The charge carrier mobility, mean free path and mean free life time were found to decrease with increasing temperature due to polaronic effect. The excitonic effective mass is estimated to (0.090–0.196)me and excitonic binding energy (15–33) meV, well consistent with Wannier-Mott hydrogenic model and the nature of exciton is likely to be Mott-Wannier type. From electrical measurement, it was observed that charge carrier conduction in CH3NH3PbI3−xClx is governed by migration of $${\mathrm{I}}^{-}$$ I - and CH3N $${\mathrm{H}}_{3}^{+}$$ H 3 + vacancies and vacancy-assisted diffusion processes depending on temperature.