High thermoelectric performance at room temperature of n-type Mg3Bi2-based materials by Se doping

Xiaobo Mo; Jiansong Liao; Guocai Yuan; Sha Zhu; Xiaobo Lei; Lihong Huang; Qinyong Zhang; Chao Wang; Zhifeng Ren

Journal of Magnesium and Alloys (Apr 2022)

High thermoelectric performance at room temperature of n-type Mg3Bi2-based materials by Se doping

Xiaobo Mo,
Jiansong Liao,
Guocai Yuan,
Sha Zhu,
Xiaobo Lei,
Lihong Huang,
Qinyong Zhang,
Chao Wang,
Zhifeng Ren

Affiliations

Xiaobo Mo: Key Laboratory of Fluid and Power Machinery of Ministry of Education, School of Materials Science & Engineering, Xihua University, Chengdu 610039, China
Jiansong Liao: Key Laboratory of Fluid and Power Machinery of Ministry of Education, School of Materials Science & Engineering, Xihua University, Chengdu 610039, China
Guocai Yuan: Key Laboratory of Fluid and Power Machinery of Ministry of Education, School of Materials Science & Engineering, Xihua University, Chengdu 610039, China
Sha Zhu: Key Laboratory of Fluid and Power Machinery of Ministry of Education, School of Materials Science & Engineering, Xihua University, Chengdu 610039, China
Xiaobo Lei: Key Laboratory of Fluid and Power Machinery of Ministry of Education, School of Materials Science & Engineering, Xihua University, Chengdu 610039, China
Lihong Huang: Key Laboratory of Fluid and Power Machinery of Ministry of Education, School of Materials Science & Engineering, Xihua University, Chengdu 610039, China; Clean Energy Materials and Engineering Center, State Key Laboratory of Electronic Thin Film and Integrated Device, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China; Corresponding author at: Key Laboratory of Fluid and Power Machinery of Ministry of Education, School of Materials Science & Engineering, Xihua University, Chengdu 610039, China.
Qinyong Zhang: Key Laboratory of Fluid and Power Machinery of Ministry of Education, School of Materials Science & Engineering, Xihua University, Chengdu 610039, China; Corresponding author.
Chao Wang: Clean Energy Materials and Engineering Center, State Key Laboratory of Electronic Thin Film and Integrated Device, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Zhifeng Ren: Department of Physics and TcSUH, University of Houston, Houston, TX 77204, United States

Journal volume & issue: Vol. 10, no. 4
pp. 1024 – 1032

Abstract

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Bi2Te3 based alloys have been the most widely used thermoelectric material at low temperature for many decades. Here we report Se doped n-type Mg3Bi2 based materials with a thermoelectric figure-of-merit ZT of 0.82 at 300 K and a peak ZT of 1.24 at 498 K, which is comparable to the n-type Bi2Te3 and Te doped Mg3Bi1.4Sb0.6. The improved thermoelectric performance is benefited from the high carrier concentration and mobility as well as the thermal conductivity reduction. The reduced resistivity increased the power factor at all measured temperatures, leading to a higher engineering ZT (ZTeng) and engineering power factor (PFeng) for n-type Mg3Bi2. The n-type Mg3Bi1.4Sb0.6 materials are promising for thermoelectric power generation and cooling applications near room temperature.

Published in Journal of Magnesium and Alloys

ISSN: 2213-9567 (Online)
Publisher: KeAi Communications Co., Ltd.
Country of publisher: China
LCC subjects: Technology: Mining engineering. Metallurgy
Website: https://www.keaipublishing.com/en/journals/journal-of-magnesium-and-alloys/

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