Semipolar {<inline-formula><math display="inline"><semantics><mrow><mn>20</mn><mover><mn>2</mn><mo>¯</mo></mover><mn>1</mn></mrow></semantics></math></inline-formula>} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing

Srinivas Gandrothula; Haojun Zhang; Pavel Shapturenka; Ryan Anderson; Matthew S. Wong; Hongjian Li; Takeshi Kamikawa; Shuji Nakamura; Steven P. DenBaars

doi:10.3390/cryst11121563

Crystals (Dec 2021)

Semipolar {<inline-formula><math display="inline"><semantics><mrow><mn>20</mn><mover><mn>2</mn><mo>¯</mo></mover><mn>1</mn></mrow></semantics></math></inline-formula>} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing

Srinivas Gandrothula,
Haojun Zhang,
Pavel Shapturenka,
Ryan Anderson,
Matthew S. Wong,
Hongjian Li,
Takeshi Kamikawa,
Shuji Nakamura,
Steven P. DenBaars

Affiliations

Srinivas Gandrothula: Materials Department, University of California, Santa Barbara, CA 93106, USA
Haojun Zhang: Materials Department, University of California, Santa Barbara, CA 93106, USA
Pavel Shapturenka: Department of Chemical Engineering, University of California, Santa Barbara, CA 93106, USA
Ryan Anderson: Materials Department, University of California, Santa Barbara, CA 93106, USA
Matthew S. Wong: Materials Department, University of California, Santa Barbara, CA 93106, USA
Hongjian Li: Materials Department, University of California, Santa Barbara, CA 93106, USA
Takeshi Kamikawa: Materials Department, University of California, Santa Barbara, CA 93106, USA
Shuji Nakamura: Materials Department, University of California, Santa Barbara, CA 93106, USA
Steven P. DenBaars: Materials Department, University of California, Santa Barbara, CA 93106, USA

DOI: https://doi.org/10.3390/cryst11121563
Journal volume & issue: Vol. 11, no. 12
p. 1563

Abstract

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Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {202¯1} GaN substrate, termed an ELO wing LD. Two types of facet feasibility studies were conducted: (1) “handmade” facets, wherein lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed the laser action in the RIE facet LDs with a threshold current of ~19 kAcm−2 and maximum light output power of 20 mW from a single uncoated facet. Handmade facet devices showed spontaneous, LED-like emission, confirming device layers remain intact after mechanical liftoff.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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