Few picosecond dynamics of intraband transitions in THz HgTe nanocrystals

Abstract

Optoelectronic devices based on intraband or intersublevel transitions in semiconductors are important building blocks of the current THz technology. Large nanocrystals (NCs) of Mercury telluride (HgTe) are promising semiconductor candidates owing to their intraband absorption peak tunable from 60 THz to 4 THz. However, the physical nature of this THz absorption remains elusive as, in this spectral range, quantum confinement and Coulomb repulsion effects can coexist. Further, the carrier dynamics at low energy in HgTe NCs, which strongly impact the performances of THz optoelectronic devices, is still unexplored. Here, we demonstrate a broad THz absorption resonance centered at ≈4.5 THz and fully interpret its characteristics with a quantum model describing multiple intraband transitions of single carriers between quantized states. Our analysis reveals the absence of collective excitations in the THz optical response of these self-doped large NCs. Furthermore, using optical pump-THz probe experiments, we report on carrier dynamics at low energy as long as 6 ps in these self-doped THz HgTe NCs. We highlight evidence that Auger recombination is irrelevant in this system and attribute the main carrier recombination process to direct energy transfer from the electronic transition to the ligand vibrational modes and to nonradiative recombination assisted by surface traps. Our study opens interesting perspectives for the use of large HgTe NCs for the development of advanced THz optoelectronic devices such as emitters and detectors and for quantum engineering at THz frequencies.

Keywords

• carrier dynamics
• semiconductor nanocrystals
• terahertz frequencies