Few picosecond dynamics of intraband transitions in THz HgTe nanocrystals
Apretna Thibault,
Massabeau Sylvain,
Gréboval Charlie,
Goubet Nicolas,
Tignon Jérôme,
Dhillon Sukhdeep,
Carosella Francesca,
Ferreira Robson,
Lhuillier Emmanuel,
Mangeney Juliette
Affiliations
Apretna Thibault
Laboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, France
Massabeau Sylvain
Laboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, France
Gréboval Charlie
Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005Paris, France
Goubet Nicolas
Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005Paris, France
Tignon Jérôme
Laboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, France
Dhillon Sukhdeep
Laboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, France
Carosella Francesca
Laboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, France
Ferreira Robson
Laboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, France
Lhuillier Emmanuel
Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005Paris, France
Mangeney Juliette
Laboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, France
Optoelectronic devices based on intraband or intersublevel transitions in semiconductors are important building blocks of the current THz technology. Large nanocrystals (NCs) of Mercury telluride (HgTe) are promising semiconductor candidates owing to their intraband absorption peak tunable from 60 THz to 4 THz. However, the physical nature of this THz absorption remains elusive as, in this spectral range, quantum confinement and Coulomb repulsion effects can coexist. Further, the carrier dynamics at low energy in HgTe NCs, which strongly impact the performances of THz optoelectronic devices, is still unexplored. Here, we demonstrate a broad THz absorption resonance centered at ≈4.5 THz and fully interpret its characteristics with a quantum model describing multiple intraband transitions of single carriers between quantized states. Our analysis reveals the absence of collective excitations in the THz optical response of these self-doped large NCs. Furthermore, using optical pump-THz probe experiments, we report on carrier dynamics at low energy as long as 6 ps in these self-doped THz HgTe NCs. We highlight evidence that Auger recombination is irrelevant in this system and attribute the main carrier recombination process to direct energy transfer from the electronic transition to the ligand vibrational modes and to nonradiative recombination assisted by surface traps. Our study opens interesting perspectives for the use of large HgTe NCs for the development of advanced THz optoelectronic devices such as emitters and detectors and for quantum engineering at THz frequencies.
