Tekhnologiya i Konstruirovanie v Elektronnoi Apparature (Oct 2009)

Forming of 4НSiC p–i–n-diodes mesastructures by the ion-plasmous etching method

  • Boltovets M. S.,
  • Borisenko A. G.,
  • Ivanov V. N.,
  • Fedorovich О. А.,
  • Krivutsa V. A.,
  • Polozov B. P.

Journal volume & issue
no. 5
pp. 45 – 48

Abstract

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The results of research and optimization of 4НSiC p–i–n-diodes mesastructures manufacturing method are presented as well as analysis of current-voltage characteristics and switching characteristics of p–i–n-diodes in the 25—500°C temperature range.

Keywords