High‐sensitive and fast MXene/silicon photodetector for single‐pixel X‐ray imaging
Yance Chen,
Yue Dai,
Srikrishna Chanakya Bodepudi,
Xinyu Liu,
Yuan Ma,
Shiyu Xing,
Dawei Di,
Feng Tian,
Xin Ming,
Yingjun Liu,
Kai Pang,
Fei Xue,
Yunyan Zhang,
Zexin Yu,
Yaping Dan,
Oleksiy V. Penkov,
Yishu Zhang,
Dianyu Qi,
Wenzhang Fang,
Yang Xu,
Chao Gao
Affiliations
Yance Chen
College of Integrated Circuits, ZJU‐Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon Materials Zhejiang University Hangzhou People's Republic of China
Yue Dai
College of Integrated Circuits, ZJU‐Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon Materials Zhejiang University Hangzhou People's Republic of China
Srikrishna Chanakya Bodepudi
College of Integrated Circuits, ZJU‐Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon Materials Zhejiang University Hangzhou People's Republic of China
Xinyu Liu
College of Integrated Circuits, ZJU‐Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon Materials Zhejiang University Hangzhou People's Republic of China
Yuan Ma
College of Integrated Circuits, ZJU‐Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon Materials Zhejiang University Hangzhou People's Republic of China
Shiyu Xing
State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics Zhejiang University Hangzhou People's Republic of China
Dawei Di
State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics Zhejiang University Hangzhou People's Republic of China
Feng Tian
College of Integrated Circuits, ZJU‐Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon Materials Zhejiang University Hangzhou People's Republic of China
Xin Ming
MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, International Research Center for X Polymers Zhejiang University Hangzhou People's Republic of China
Yingjun Liu
MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, International Research Center for X Polymers Zhejiang University Hangzhou People's Republic of China
Kai Pang
MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, International Research Center for X Polymers Zhejiang University Hangzhou People's Republic of China
Fei Xue
College of Integrated Circuits, ZJU‐Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon Materials Zhejiang University Hangzhou People's Republic of China
Yunyan Zhang
College of Integrated Circuits, ZJU‐Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon Materials Zhejiang University Hangzhou People's Republic of China
Zexin Yu
Institute for Manufacturing Technologies of Ceramic Components and Composites (IMTCCC), University of Stuttgart Stuttgart Germany
Yaping Dan
University of Michigan‐Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University Shanghai People's Republic of China
Oleksiy V. Penkov
ZJU‐UIUC Institute, International Campus, Zhejiang University Haining People's Republic of China
Yishu Zhang
College of Integrated Circuits, ZJU‐Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon Materials Zhejiang University Hangzhou People's Republic of China
Dianyu Qi
College of Integrated Circuits, ZJU‐Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon Materials Zhejiang University Hangzhou People's Republic of China
Wenzhang Fang
College of Integrated Circuits, ZJU‐Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon Materials Zhejiang University Hangzhou People's Republic of China
Yang Xu
College of Integrated Circuits, ZJU‐Hangzhou Global Scientific and Technological Innovation Center, State Key Laboratory of Silicon Materials Zhejiang University Hangzhou People's Republic of China
Chao Gao
MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, International Research Center for X Polymers Zhejiang University Hangzhou People's Republic of China
Abstract The demand for high‐performance X‐ray detectors leads to material innovation for efficient photoelectric conversion and carrier transfer. However, current X‐ray detectors are often susceptible to chemical and irradiation instability, complex fabrication processes, hazardous components, and difficult compatibility. Here, we investigate a two‐dimensional (2D) material with a relatively low atomic number, Ti3C2Tx MXenes, and single crystal silicon for X‐ray detection and single‐pixel imaging (SPI). We fabricate a Ti3C2Tx MXene/Si X‐ray detector demonstrating remarkable optoelectronic performance. This detector exhibits a sensitivity of 1.2 × 107 μC Gyair−1 cm−2, a fast response speed with a rise time of 31 μs, and an incredibly low detection limit of 2.85 nGyair s−1. These superior performances are attributed to the unique charge coupling behavior under X‐ray irradiation via intrinsic polaron formation. The device remains stable even after 50 continuous hours of high‐dose X‐ray irradiation. Our device fabrication process is compatible with silicon‐based semiconductor technology. Our work suggests new directions for eco‐friendly X‐ray detectors and low‐radiation imaging system.
