Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications

Abstract

The AI and IoT era requires software and hardware capable of efficiently processing massive amounts data quickly and at a low cost. However, there are bottlenecks in existing Von Neumann structures, including the difference in the operating speed of current-generation DRAM and Flash memory systems, the large voltage required to erase the charge of nonvolatile memory cells, and the limitations of scaled-down systems. Ferroelectric materials are one exciting means of breaking away from this structure, as Hf-based ferroelectric materials have a low operating voltage, excellent data retention qualities, and show fast switching speed, and can be used as non-volatile memory (NVM) if polarization characteristics are utilized. Moreover, adjusting their conductance enables diverse computing architectures, such as neuromorphic computing with analog characteristics or ‘logic-in-memory’ computing with digital characteristics, through high integration. Several types of ferroelectric memories, including two-terminal-based FTJs, three-terminal-based FeFETs using electric field effect, and FeRAMs using ferroelectric materials as capacitors, are currently being studied. In this review paper, we include these devices, as well as a Fe-diode with high on/off ratio properties, which has a similar structure to the FTJs but operate with the Schottky barrier modulation. After reviewing the operating principles and features of each structure, we conclude with a summary of recent applications that have incorporated them.

Keywords

• HZO
• ferroelectric memory device
• NVM
• in-memory computing
• neuromorphic
• FTJ