Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes
P. Chen,
D. G. Zhao,
D. S. Jiang,
H. Long,
M. Li,
J. Yang,
J. J. Zhu,
Z. S. Liu,
X. J. Li,
W. Liu,
X. Li,
F. Liang,
J. P. Liu,
B. S. Zhang,
H. Yang
Affiliations
P. Chen
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
D. G. Zhao
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
D. S. Jiang
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
H. Long
Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China
M. Li
Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China
J. Yang
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
J. J. Zhu
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Z. S. Liu
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
X. J. Li
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
W. Liu
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
X. Li
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
F. Liang
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
J. P. Liu
Key Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
B. S. Zhang
Key Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
H. Yang
Key Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
The hole distribution and electroluminescence property improvement by adjusting the relative position between quantum wells and p-doped region in InGaN/GaN multiple-quantum-well structures are experimentally and theoretically investigated. Five designed samples with different barrier layer parameters of multiple-quantum-well structure are grown by MOCVD and then fabricated into devices. The electroluminescence properties of these samples are measured and compared. It is found that the output electroluminescence intensity of samples is enhanced if the position of quantum wells shifts towards p-side, while the output power is reduced if their position is shifted towards the n-side. The theoretical calculation of characteristics of these devices using the simulation program APSYS agrees well with the experimental data, illustrating that the effect of relative position between p-doped region and quantum wells on the improvement of hole distribution and electroluminescence performance is significant, especially for InGaN/GaN multiple-quantum-well devices operated under high injection condition.
