Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

Bin Fang; Jiafeng Feng; Huadong Gan; Roger Malmhall; Yiming Huai; Rongxin Xiong; Hongxiang Wei; Xiufeng Han; Baoshun Zhang; Zhongming Zeng

doi:10.1063/1.4971229

AIP Advances (Dec 2016)

Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

Bin Fang,
Jiafeng Feng,
Huadong Gan,
Roger Malmhall,
Yiming Huai,
Rongxin Xiong,
Hongxiang Wei,
Xiufeng Han,
Baoshun Zhang,
Zhongming Zeng

Affiliations

Bin Fang: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road398, Suzhou 215123, China
Jiafeng Feng: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Huadong Gan: Avalanche Technology, Fremont, California 94538, United States
Roger Malmhall: Avalanche Technology, Fremont, California 94538, United States
Yiming Huai: Avalanche Technology, Fremont, California 94538, United States
Rongxin Xiong: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road398, Suzhou 215123, China
Hongxiang Wei: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Xiufeng Han: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Baoshun Zhang: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road398, Suzhou 215123, China
Zhongming Zeng: Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road398, Suzhou 215123, China

DOI: https://doi.org/10.1063/1.4971229
Journal volume & issue: Vol. 6, no. 12
pp. 125305 – 125305-7

Abstract

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We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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