Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer
Bin Fang,
Jiafeng Feng,
Huadong Gan,
Roger Malmhall,
Yiming Huai,
Rongxin Xiong,
Hongxiang Wei,
Xiufeng Han,
Baoshun Zhang,
Zhongming Zeng
Affiliations
Bin Fang
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road398, Suzhou 215123, China
Jiafeng Feng
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Huadong Gan
Avalanche Technology, Fremont, California 94538, United States
Roger Malmhall
Avalanche Technology, Fremont, California 94538, United States
Yiming Huai
Avalanche Technology, Fremont, California 94538, United States
Rongxin Xiong
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road398, Suzhou 215123, China
Hongxiang Wei
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Xiufeng Han
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Baoshun Zhang
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road398, Suzhou 215123, China
Zhongming Zeng
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road398, Suzhou 215123, China
We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.
