Modulating Light Emission Performance of PCSEL via GaN HEMT Driving Circuit
Yu-Heng Hong,
Ching-Yao Liu,
Jun-Da Chen,
Chun-Yen Peng,
Li-Chuan Tang,
Tien-Chang Lu,
Chun-Hsiung Lin,
Wei-Hua Chieng,
Edward Yi Chang,
Shih-Chen Chen,
Hao-Chung Kuo
Affiliations
Yu-Heng Hong
Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan
Ching-Yao Liu
Department of Mechanical Engineering, College of Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Jun-Da Chen
Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan
Chun-Yen Peng
Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan
Li-Chuan Tang
Department of Mechanical Engineering, College of Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Tien-Chang Lu
Department of Photonics, Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Chun-Hsiung Lin
International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Wei-Hua Chieng
Department of Mechanical Engineering, College of Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Edward Yi Chang
International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
Shih-Chen Chen
Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan
Hao-Chung Kuo
Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan
In this study, a paradigm for modulating the light emission performance of photonic-crystal surface-emitting laser (PCSEL) via GaN high electron mobility transistor (HEMT) driving circuit is proposed for the first time. For light detection and ranging (LiDAR) system, a faster pulse repetition frequency with shorter pulse width can provide not only high resolution but also sufficiently precise range resolution. Hereupon, comprehensive analyses for such an integrated system are conducted with not only electro-optical responses but also the corresponding optical behaviors. The relevant electrical characteristics of the employed GaN HEMT are examined at first. Next, the integrated system on a matrix board with its corresponding circuit topology is discussed, illustrating the relevant operating principles. Thereby, sufficient systematical scrutinization for relevant light emissions is performed for both photodiode responses and the optical behaviors under different conditions, paving a holistic panorama for the LiDAR system. Thus, prospects for the next generation LiDAR system in high-power and high-speed operation can be expected.
