Advanced Electronic Materials (Jul 2023)
Type‐II Dirac Nodal Lines in a Double‐Kagome‐Layered Semimetal
- Yongqing Cai,
- Jianfeng Wang,
- Yuan Wang,
- Zhanyang Hao,
- Yixuan Liu,
- Liang Zhou,
- Xuelei Sui,
- Zhicheng Jiang,
- Shengjie Xu,
- Han Ge,
- Xiao‐Ming Ma,
- Chengcheng Zhang,
- Zecheng Shen,
- Yichen Yang,
- Qi Jiang,
- Zhengtai Liu,
- Mao Ye,
- Dawei Shen,
- Yi Liu,
- Shengtao Cui,
- Le Wang,
- Cai Liu,
- Junhao Lin,
- Bing Huang,
- Liusuo Wu,
- Jincheng Zhuang,
- Hongtao He,
- Wenqing Zhang,
- Jia‐Wei Mei,
- Chaoyu Chen
Affiliations
- Yongqing Cai
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Jianfeng Wang
- School of Physics Beihang University Beijing 100191 China
- Yuan Wang
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Zhanyang Hao
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Yixuan Liu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Liang Zhou
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Xuelei Sui
- Beijing Computational Science Research Center Beijing 100193 China
- Zhicheng Jiang
- State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China
- Shengjie Xu
- School of Physics Beihang University Beijing 100191 China
- Han Ge
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Xiao‐Ming Ma
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Chengcheng Zhang
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Zecheng Shen
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Yichen Yang
- State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China
- Qi Jiang
- State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China
- Zhengtai Liu
- State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China
- Mao Ye
- State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China
- Dawei Shen
- State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China
- Yi Liu
- National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei Anhui 230029 China
- Shengtao Cui
- National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei Anhui 230029 China
- Le Wang
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Cai Liu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Junhao Lin
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Bing Huang
- Beijing Computational Science Research Center Beijing 100193 China
- Liusuo Wu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Jincheng Zhuang
- School of Physics Beihang University Beijing 100191 China
- Hongtao He
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Wenqing Zhang
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Jia‐Wei Mei
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- Chaoyu Chen
- Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics Southern University of Science and Technology (SUSTech) Shenzhen 518055 China
- DOI
- https://doi.org/10.1002/aelm.202300212
- Journal volume & issue
-
Vol. 9,
no. 7
pp. n/a – n/a
Abstract
Abstract Lorentz‐violating type‐II Dirac nodal line semimetals (DNLSs), hosting curves of band degeneracy formed by two dispersion branches with the same sign of slope, represent a novel state of matter. While being studied extensively in theory, convincing experimental evidence of type‐II DNLSs remain elusive. Recently, vanadium‐based kagome materials have emerged as a fertile ground to study the interplay between lattice symmetry and band topology. This work studies the low‐energy band structure of double‐kagome‐layered CsV8Sb12 and identifies it as a scarce type‐II DNLS protected by mirror symmetry. This work observes multiple DNLs consisting of type‐II Dirac cones close to or almost at the Fermi level via angle‐resolved photoemission spectroscopy (ARPES), which provides an electronic explanation for the nonsaturating magnetoresistance effect as observed. First‐principles theory analyses show that spin‐orbit coupling only opens a small gap, resulting in effectively gapless ARPES spectra, yet generating large spin Berry curvature. These type‐II DNLs, together with the interaction between a low‐energy van Hove singularity and quasi‐one‐dimensional band as observed in the same material, suggest CsV8Sb12 as an ideal platform for exploring novel transport properties.
Keywords
- nonsaturating magnetoresistance
- quasi‐1D band
- spin Berry curvature
- type‐II Dirac nodal line semimetal
- van Hove singularity
