Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

Abstract

In this work, we investigated the self-heating effects of annealed Ti/Al/Ni/Au ohmic contacts and two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures under strong electric field by using the short pulse current–voltage and microwave noise measurement techniques. The experimental results demonstrated that the self-heating phenomena in ohmic contacts with the increase of current may dominate over the electrical performances of 2DEG channel. Moreover, the excess noise temperature of contact resistance was found to be more than four times higher than that of 2DEG channel at the same high current density values. The results reveal the importance of self-heating of the ohmic contacts on the device performance under short-duration (only 100 ns) and low-duty-cycle (only 10−5) pulse regime.

Keywords

• Gallium nitride
• AlGaN/GaN
• TLM
• HEMT
• contact resistance
• 2DEG