AIP Advances
(Jun 2015)
Growth of perpendicularly magnetized thin films on a polymer buffer and voltage-induced change of magnetic anisotropy at the MgO|CoFeB interface
D. D. Lam,
F. Bonell,
Y. Shiota,
S. Miwa,
T. Nozaki,
E. Tamura,
N. Mizuochi,
T. Shinjo,
Y. Suzuki,
S. Yuasa
Affiliations
D. D. Lam
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
F. Bonell
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
Y. Shiota
National Institute of Advance Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
S. Miwa
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
T. Nozaki
National Institute of Advance Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
E. Tamura
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
N. Mizuochi
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
T. Shinjo
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
Y. Suzuki
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
S. Yuasa
National Institute of Advance Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
DOI
https://doi.org/10.1063/1.4922602
Journal volume & issue
Vol. 5,
no. 6
pp.
067132
– 067132-6
Abstract
Read online
We show that perpendicularly magnetized thin films can be grown onto polyimide, a potentially flexible substrate. With polar Kerr magnetometry, we demonstrate that the coercive field of CoFeB thin film can be modulated by applying a back gate voltage. Our proposed multi-layered structure is suitable for surface-sensitive measurements of the voltage-induced change in anisotropy, and could be used to realize flexible spintronics devices.
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