Influence of microwave radiation on relaxation processes in silicon carbide

Abstract

The methods of optical absorption spectroscopy and high-resolution diffractometry have been used to study the influence of microwaves on characteristics of crystalline SiC. Being based on the X-ray analysis data, optical transmission, photoluminescence, and photoluminescence excitation spectra, it has been shown that the microwave treatment leads to a change in the gradient of internal mechanical stresses and an increase in the migration capability of dislocations and, as a result, to redistribution of recombination centers in the sample.

Keywords

• microwave radiation
• relaxation processes
• silicon carbide
• optical absorption spectroscopy
• high-resolution diffractometry