Input Voltage-Level Driven Split-Input Inverter Level Shifter for Nanoscale Applications

Abstract

A level shifter (LS) appears to be highly efficient and effective in solving voltage contentions between deep sub-threshold and core voltage levels. An input voltage-level driven split-input inverter that can create common unconnected PMOS and NMOS transistors for the input inverter is proposed, which is powered and used at the input stage to achieve maximum conversion efficiency. Layout and simulation results across different corners have demonstrated that the proposed LS is highly useful for cutting-edge nanoscale applications. It can up-convert voltage from 0.2 V to 1.2 V and down-convert from 1.2 V to 0.2 V @ 1 MHz input pulse, with a level-up or level-down mean switching delay of 1.3 ns, and a power of 9.5 nW. Moreover, the LS occupies an area of 8 μm2, which is a reasonably compact size compared to the typical LS designs. Overall, the proposed voltage LS design is an efficient and effective solution that could have an ample range of applications in IoT and biomedical, wireless sensor networks.

Keywords

• propagation delay
• power consumption
• voltage-level driven-input inverter
• Internet of Things (IoT)
• System-on-Chip (SoC)