Composition effects on structure and optical properties in double perovskite derivatives semiconductors Cs2SnI6−xBrx (x = 0–6)
Xingming Yang,
Yan Wang,
Junjie Jiang,
Mengmeng Li,
Zheng Tang,
Hongling Cai,
Fengming Zhang,
Xiaoshan Wu
Affiliations
Xingming Yang
Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
Yan Wang
Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
Junjie Jiang
Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
Mengmeng Li
Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
Zheng Tang
Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
Hongling Cai
Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
Fengming Zhang
Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
Xiaoshan Wu
Collaborative Innovation Center of Advanced Microstructures, Lab of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
We have proved that Cs2SnI6−xBrx (x = 0–6) can be eutectic in the whole composition, and the eutectic phase has the similar cubic symmetry with both of the end phases (space group of Fm3¯m). The lattice constant decreases from around 11.67 Å (x = 0) to around 10.83 Å (x = 6). Hall-plot analysis shows that the strain varies sharply near the two end materials, while the strain is almost independent of Br content at the middle Br content. The bandgap, on the other hand, increases from 1.26 eV to 2.93 eV with increasing the Br content, which might be expected in fabricating the continuous junction solar cells.
