V₂O₅ Thin Films as Nitrogen Dioxide Sensors <xref rid="fn1-sensors-375730" ref-type="fn">†</xref>

Abstract

Vanadium pentoxide thin films were deposited onto insulating support by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. X-ray diffraction at glancing incidence (GIXD) and Scanning Electronic Microscopy (SEM) were used for structural and phase characterization. Thickness of the films was determined by the profilometry. It has been confirmed by GIXD that the deposited films are composed of V2O5 phase. The gas sensing properties of V2O5 thin films were investigated at temperatures from range 410⁻617 K upon NO2 gas of 4⁻20 ppm. The investigated material exhibited good response and reversibility towards nitrogen dioxide. The effect of metal-insulator transition (MIT) on sensor performance has been observed and discussed for the first time. It was found that a considerable increase of the sensor sensitivity occured above 545 K, which is related to postulated metal-insulator transition.

Keywords

• vanadium pentoxide
• thin film
• reactive sputtering
• electrical properties
• nitrogen dioxide
• gas sensor
• metal-insulator transition (MIT)