Nanoscale Research Letters (Jan 2009)

Study on Resistance Switching Properties of Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub>Thin Films Using Impedance Spectroscopy

  • Zhang Ting,
  • Zhang Xinan,
  • Ding Linghong,
  • Zhang Weifeng

Journal volume & issue
Vol. 4, no. 11
pp. 1309 – 1314

Abstract

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Abstract The Na0.5Bi0.5TiO3(NBT) thin films sandwiched between Au electrodes and fluorine-doped tin oxide (FTO) conducting glass were deposited using a sol–gel method. Based on electrochemical workstation measurements, reproducible resistance switching characteristics and negative differential resistances were obtained at room temperature. A local impedance spectroscopy measurement of Au/NBT was performed to reveal the interface-related electrical characteristics. The DC-bias-dependent impedance spectra suggested the occurrence of charge and mass transfer at the interface of the Au/NBT/FTO device. It was proposed that the first and the second ionization of oxygen vacancies are responsible for the conduction in the low- and high-resistance states, respectively. The experimental results showed high potential for nonvolatile memory applications in NBT thin films.

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