Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology

Abstract

In the present study, the authors demonstrate a complementary metal-oxide semiconductor (CMOS) image sensor implemented with on-chip polarisers using 65-nm standard CMOS technology. The polariser is composed of metal wire grids made of metal wires fabricated by the CMOS process. An extinction ratio of 18.8 dB was obtained for a single pixel with an on-chip polariser, where the line/space widths have the finest pitch obtainable by 65-nm technology. Electrical crosstalk between pixels is reduced by over 25% using a guard ring structure. Polarisation imaging by the sensor was also performed.

Keywords

• CMOS image sensors
• complementary metal-oxide semiconductor image sensor
• CMOS image sensor
• on-chip polarisers
• metal wire grids
• line-space widths
• electrical crosstalk
• guard ring structure
• polarisation imaging
• size 65 nm