GaAs-based red micro-light-emitting diodes with an oxide perimeter region for improved external quantum efficiency

Abstract

Red micro-light-emitting diodes (μ-LEDs) with AlGaInP/GaInP multiple quantum wells are fabricated with an oxide perimeter region to control the current injection path. When the values of the external quantum efficiency (EQE) of the 30 μm-size μ-LED with the oxide perimeter region are compared with those of the device without the oxide perimeter region, an improvement as high as 40% is observed at current densities <80 A/cm2. From the finite-difference time-domain simulation of the light-extraction efficiency (LEE), which shows that the LEE of the device with the oxide perimeter region is ∼12% smaller than that of the device without the oxide perimeter region, it can be seen that the increased EQE is attributed to the improvement of the internal quantum efficiency (IQE). Since the oxide perimeter region limits the current paths to the sidewalls of the μ-LED chips, the nonradiative recombination via sidewall defects is considered suppressed, resulting in the improvement of the IQE. The oxidation of the AlGaAs layer utilized in this work is easy to implement and accurately controllable, suitable for mass-production of high-efficiency red μ-LEDs for display applications.