Characterization of Fe-doped In-Sb-Te (Fe: 10 at.%) material with individual electrical-phase-change and magnetic properties

Young Mi Lee; Dang Duc Dung; Sunglae Cho; Min Sang Jung; Duck Kyun Choi; Docheon Ahn; Min Kyu Kim; Jae-Young Kim; Min-Cherl Jung

doi:10.1063/1.3609265

AIP Advances (Jun 2011)

Characterization of Fe-doped In-Sb-Te (Fe: 10 at.%) material with individual electrical-phase-change and magnetic properties

Young Mi Lee,
Dang Duc Dung,
Sunglae Cho,
Min Sang Jung,
Duck Kyun Choi,
Docheon Ahn,
Min Kyu Kim,
Jae-Young Kim,
Min-Cherl Jung

Affiliations

Young Mi Lee: Energy Harvest-Storage Research Center (EHSRC) and Dept. of Physics, University of Ulsan, 680-749, Republic of Korea
Dang Duc Dung: Energy Harvest-Storage Research Center (EHSRC) and Dept. of Physics, University of Ulsan, 680-749, Republic of Korea
Sunglae Cho: Energy Harvest-Storage Research Center (EHSRC) and Dept. of Physics, University of Ulsan, 680-749, Republic of Korea
Min Sang Jung: Department of Material Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea
Duck Kyun Choi: Department of Material Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea
Docheon Ahn: Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
Min Kyu Kim: Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
Jae-Young Kim: Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
Min-Cherl Jung: Center for Atomic Wires and Layers, Dept. of Physics, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea

DOI: https://doi.org/10.1063/1.3609265
Journal volume & issue: Vol. 1, no. 2
pp. 022150 – 022150-9

Abstract

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We propose a new electrical-phase-change magnetic material, namely Fe-doped In-Sb-Te (FIST), for possible non-volatile multi-bit memory applications. FIST was formed by typical co-sputter method with Fe 10 at.% doping in In3Sb1Te2. FIST offers the electrical-phase-change and magnetic properties by way of the change of In 4d chemical bonding density and embedded Fe nanoclusters with the size of 4∼5 nm, respectively. It maintained the amorphous phase on the electrical-phase-change. Chemical state of In was only changed to increase the density of In-In chemical bonding during the electrical-phase-change without Fe nanoclusters contribution. Also, the magnetic property by Fe nanoclusters was not changed by the electrical-phase-change. On this basis, we propose the FIST material with the individual electrical-phase-change and magnetic properties for the multi-bit nonvolatile memory materials.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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