Characteristics of Vertical Ga2O3 Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film

• Venkata Krishna Rao Rama,
• Ajinkya K. Ranade,
• Pradeep Desai,
• Bhagyashri Todankar,
• Golap Kalita,
• Hiroo Suzuki,
• Masaki Tanemura,
• Yasuhiko Hayashi

Affiliations

Venkata Krishna Rao Rama

Graduate School of Natural Science and Technology, Okayama University, Okayama, Japan

Ajinkya K. Ranade

Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya, Japan

Pradeep Desai

Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya, Japan

Bhagyashri Todankar

Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya, Japan

Golap Kalita

Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya, Japan

Hiroo Suzuki

Graduate School of Natural Science and Technology, Okayama University, Okayama, Japan

Masaki Tanemura

Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya, Japan

Yasuhiko Hayashi

Graduate School of Natural Science and Technology, Okayama University, Okayama, Japan