Research progress in thermal conductivity of SiC ceramics

Abstract

SiC ceramics has been extensively used in heat exchangers because of their excellent mechanical properties, high thermal conductivity, and superior thermal shock, corrosion, and oxidation resistance. However, there is a wide variation in the thermal conductivity of SiC ceramics, depending on the raw materials, molding process, sintering process, and sintering additives. The thermal conductivity of SiC ceramics (≤ 270 W·m-1·K-1) is much lower than that of 6H-SiC single crystals (490 W·m-1·K-1) because of pores, grain boundaries, impurities, and defects in SiC ceramics. In this work, the important factors affecting the thermal conductivity of SiC ceramics were analyzed, including temperature, pore, crystal structure, and second phase. Further, the preparation processes of high conductivity SiC ceramics were systematically compared based on hot-pressed sintering, spark plasma sintering, pressureless sintering, recrystallization sintering, and reaction sintering. The improvement measures of thermal conductivity of SiC ceramics were summarized, including the optimization of the type and content of sintering aids, high-temperature annealing, and adding a high-thermal-conductivity second phase. Finally, the prospects and research directions of low-cost and high-thermal-conductivity SiC ceramics are proposed.

Keywords

• silicon carbide ceramic
• thermal conductivity
• phonon scattering
• grain boundary
• second phase
• sintering additive
• heat treatment