Radio Physics and Radio Astronomy (Jun 2022)

CHANGES IN ELECTROMAGNETIC WAVE POLARIZATION RESULTING FROM ITS REFLECTION AT A UNIAXIAL PLASMONIC METASURFACE ON TOP OF A DIELECTRIC LAYER

  • M. M. Beletskii,
  • I. D. Popovych

DOI
https://doi.org/10.15407/rpra27.02.153
Journal volume & issue
Vol. 27, no. 2
pp. 153 – 160

Abstract

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Subject and Purpose. The analysis of the electromagnetic waves’ polarizational transformations that may accompany their reflection from a metasurface is of considerable scientific and practical interest from the point of possibilities for improving characteristics of nanoelectronic and optical devices, and creating novel types of these. This work has been aimed at finding the conditions for efficient conversion of a p-polarized electromagnetic wave incident upon a uniaxial plasmonic metasurface at the boundary of a dielectric layer, into a wave of s-polarization. Methods and Methodology. The effects of conversion of p-polarized electromagnetic waves incident upon a uniaxial plasmonic metasurface, into s-polarized waves were explored through numerical modeling. The approach has allowed determining the wave frequencies and thicknesses of the dielectric layer best suitable for ensuring full conversion. Results. The presence of a uniaxial plasmonic metasurface on top of a dielectric layer can provide for full conversion of an incident p-polarized electromagnetic wave into a wave of s-polarization. As has been established, the effect takes place if the plane of incidence of the p-polarized wave makes an acute angle with the principal axis of the plasmonic metasurface. Another finding is that the full conversion is possible for a variety of permittivity values of the dielectric layer. Conclusions. The uniaxial plasmonic metasurface placed on a dielectric layer is characterized by unique reflective properties. It can have a noticeable impact on polarization of the p-polarized wave’s incident upon the layer. Dielectric layers provided with uniaxial meta-surfaces can be used for creating optical and nanoelectronic devices of new types.

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