Advances in Electrical and Electronic Engineering (Jan 2006)

Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon

  • Ladislav Harmatha,
  • Peter Ballo,
  • Juraj Breza,
  • Pavol Pisecny,
  • Milan Tapajna

Journal volume & issue
Vol. 5, no. 1
pp. 334 – 336

Abstract

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The article presents the results of capacitance measurements on MOS structures with a silicon substrate that wasdoped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energydistribution of the trap density at the Si-SiO2 interface. The effect of the bond of nitrogen and oxygen brought about a slightincrease in the trap density with a typical distribution of energy maxima of the deep levels in the forbidden band of Si.

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