An upconversion device based on high-performance dual-layer white organic electroluminescent devices
Weigao Wang,
Yiyang Li,
Yili Wan,
Yu Duan,
Hua An,
Zhengchun Peng
Affiliations
Weigao Wang
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong 518060, China
Yiyang Li
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong 518060, China
Yili Wan
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong 518060, China
Yu Duan
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong 518060, China
Hua An
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong 518060, China
Zhengchun Peng
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong 518060, China
Large-area imaging techniques in the short-wave infrared spectral region remain a pressing need. Organic light-emitting diodes and infrared photodetectors can be combined to form a near-infrared (NIR) to visible upconversion device, which has great potential to replace traditional infrared imaging systems. The integration of a white organic light-emitting diode (WOLED) with infrared photodetectors has become essential to realize full-color displays for its simple preparation process and high compatibility. This work has designed and optimized a WOLED to achieve stable emission with high brightness (19 470 cd m−2) and high external quantum efficiency (EQE = 18.08%) at a wide voltage range, thereby reducing chromaticity drift caused by voltage fluctuations. Moreover, photon-generated holes in the NIR-sensitive photodetector are able to inject into the WOLED for visible light emission. Consequently, we have obtained a high-performance upconversion device with a luminance on-off ratio exceeding 5 × 103 at 850 nm NIR and a high color stability over a wide range of operating voltage. Our efforts have accomplished a high-performance upconversion device from NIR to white visible light, laying the groundwork for a preliminary exploration of full-color displays.
