Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
Mikhail O. Petrushkov,
Demid S. Abramkin,
Eugeny A. Emelyanov,
Mikhail A. Putyato,
Oleg S. Komkov,
Dmitrii D. Firsov,
Andrey V. Vasev,
Mikhail Yu. Yesin,
Askhat K. Bakarov,
Ivan D. Loshkarev,
Anton K. Gutakovskii,
Victor V. Atuchin,
Valery V. Preobrazhenskii
Affiliations
Mikhail O. Petrushkov
Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
Demid S. Abramkin
Laboratory of Molecular Beam Epitaxy of A3B5 Compounds, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
Eugeny A. Emelyanov
Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
Mikhail A. Putyato
Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
Oleg S. Komkov
Department of Electronics, St. Petersburg Electrotechnical University “LETI”, St. Petersburg 197022, Russia
Dmitrii D. Firsov
Department of Electronics, St. Petersburg Electrotechnical University “LETI”, St. Petersburg 197022, Russia
Andrey V. Vasev
Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
Mikhail Yu. Yesin
Laboratory of Molecular Beam Epitaxy of Elementary Semiconductors and A3B5 Compounds, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
Askhat K. Bakarov
Laboratory of Molecular Beam Epitaxy of A3B5 Compounds, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
Ivan D. Loshkarev
Laboratory of Molecular Beam Epitaxy of Elementary Semiconductors and A3B5 Compounds, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
Anton K. Gutakovskii
Laboratory of Nanodiagnostics and Nanolithography, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
Victor V. Atuchin
Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
Valery V. Preobrazhenskii
Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It was found that the introduction of LT-GaAs layers, in combination with post-growth cyclic annealing, reduced the threading dislocation density down to 5 × 106 cm−2, the root-mean-square roughness of the GaAs surface down to 1.1 nm, and the concentration of non-radiative recombination centers in the near-surface GaAs/Si regions down to the homoepitaxial GaAs level. Possible reasons for the improvement in the quality of near-surface GaAs layers are discussed. On the one hand, the presence of elastic deformations in the GaAs/LT-GaAs system led to dislocation line bending. On the other hand, gallium vacancies, formed in the LT-GaAs layers, diffused into the overlying GaAs layers and led to an increase in the dislocation glide rate. It was demonstrated that the GaAs/Si HSs obtained with these techniques are suitable for growing high-quality light-emitting HSs with self-assembled quantum dots.
