Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs

Xiang Guan; Yuqing Li; Yuanyuan Meng; Kongxiang Wang; Kebin Lin; Yujie Luo; Jing Wang; Zhongtao Duan; Hong Liu; Liu Yang; Lingfang Zheng; Junpeng Lin; Yalian Weng; Fengxian Xie; Jianxun Lu; Zhanhua Wei

doi:10.1038/s41467-024-54160-x

Nature Communications (Nov 2024)

Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs

Xiang Guan,
Yuqing Li,
Yuanyuan Meng,
Kongxiang Wang,
Kebin Lin,
Yujie Luo,
Jing Wang,
Zhongtao Duan,
Hong Liu,
Liu Yang,
Lingfang Zheng,
Junpeng Lin,
Yalian Weng,
Fengxian Xie,
Jianxun Lu,
Zhanhua Wei

Affiliations

Xiang Guan: Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University
Yuqing Li: Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University
Yuanyuan Meng: Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University
Kongxiang Wang: Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University
Kebin Lin: Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University
Yujie Luo: Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University
Jing Wang: Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University
Zhongtao Duan: Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University
Hong Liu: Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University
Liu Yang: Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University
Lingfang Zheng: Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University
Junpeng Lin: Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University
Yalian Weng: Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University
Fengxian Xie: Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University
Jianxun Lu: Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University
Zhanhua Wei: Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University

DOI: https://doi.org/10.1038/s41467-024-54160-x
Journal volume & issue: Vol. 15, no. 1
pp. 1 – 9

Abstract

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Abstract Eco-friendly Sn-based perovskites show significant potential for high-performance second near-infrared window light-emitting diodes (900 nm – 1700 nm). Nevertheless, achieving efficient and stable Sn-based perovskite second near-infrared window light-emitting diodes remains challenging due to the propensity of Sn2+ to oxidize, resulting in detrimental Sn4+-induced defects and compromised device performance. Here, we present a targeted strategy to eliminate Sn4+-induced defects through moisture-triggered hydrolysis of tin tetrahalide, without degrading Sn2+ in the CsSnI3 film. During the moisture treatment, tin tetrahalide is selectively hydrolyzed to Sn(OH)4, which provides sustained protection. As a result, we successfully fabricate second near-infrared window light-emitting diodes emitting at 945 nm, achieving a performance breakthrough with an external quantum efficiency of 7.6% and an operational lifetime reaching 82.6 h.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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