AIP Advances (Dec 2019)

Large on-chip Brillouin net amplification in silicon-based nano-photonics

  • Hyeongpin Kim,
  • Heedeuk Shin

DOI
https://doi.org/10.1063/1.5125699
Journal volume & issue
Vol. 9, no. 12
pp. 125032 – 125032-6

Abstract

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Recent developments in on-chip forward Brillouin scattering open up potential applications such as RF photonic signal processing, on-chip Brillouin amplification, and on-chip Brillouin lasers. The stimulated Brillouin scattering gain coefficients become significant with a small optical mode area, and the Brillouin net amplification has been believed to be strong with a small mode area, too. However, here, we present a theoretical study of higher net amplification with a large optical mode area than that with a small mode area and explain this counter-intuitive phenomenon by examining the contribution of various optical forces to Brillouin gain coefficients for various optical waveguide dimensions. The simulation results show that a waveguide with large optical waveguide dimensions can yield significant net amplification by high Brillouin gain coefficients and low optical losses at high pump power even if the Brillouin gain coefficients are lower than that with a small waveguide dimension. Therefore, it is necessary to optimize the optical waveguide dimensions to achieve maximum net amplification for the development of Brillouin lasers and amplifiers in silicon-based nanophotonics.